SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

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SIA427DJ-T1-GE3
Описание:
MOSFET P-CH 8V 12A PPAK SC70-6
Упаковка:
Tape & Reel (TR)
Datasheet:
SIA427DJ-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIA427DJ-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):7d3364268c2b8854793e00b793cae274
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:7e48b8fa9522e5e11e0848efb85e4c3a
Vgs(th) (Max) @ Id:ca87f9064cd95fc0bb3d9137ab50b2aa
Gate Charge (Qg) (Max) @ Vgs:66eebd3d5d4c17463a1a4b83ad275271
Vgs (Max):051eb3694b8dd0dc96802e319d53b81e
Input Capacitance (Ciss) (Max) @ Vds:ae4c60340b9863e8309bb1f8ab99c145
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):75787a4344f173cc8e2c9e7678b73b3f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:98d85f5568654e09ffeef6b181653587
Package / Case:98d85f5568654e09ffeef6b181653587
In Stock: 0
Stock:
0 Can Ship Immediately
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