IPB020NE7N3GATMA1

IPB020NE7N3GATMA1

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IPB020NE7N3GATMA1
Описание:
MOSFET N-CH 75V 120A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB020NE7N3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB020NE7N3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):127321faf7ab6033447f8457edc41d44
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c0e82a4c9c01ce4289f644b1b1e0530b
Vgs(th) (Max) @ Id:0f9061c705b2947d56dd9bbc055a09ff
Gate Charge (Qg) (Max) @ Vgs:41f3d62fd7f14754979e6fa80c52daf2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:ede7671582cbe13bc3d3b203de9c65b1
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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