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See Product Specifications
| номер части: | IPB041N04NGATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | f62bcea93691757a98ebc71a7b6990f8 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 949b7a0c6ec55a1bda2e2f09fd5a128b |
| Vgs(th) (Max) @ Id: | d05533e2ad3a80ce1c08ed733e612224 |
| Gate Charge (Qg) (Max) @ Vgs: | ec7ed06369aef779c1b881719a9ae5ce |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | e412f2e28d3dfe2f000eb6dd8416b7d3 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 570b43b1a943317386ae8969270b009f |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fa3aee1f7ec3f3747a89416bed6c07d9 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
