IPB100N06S205ATMA1

IPB100N06S205ATMA1

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IPB100N06S205ATMA1
Описание:
MOSFET N-CH 55V 100A TO263-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB100N06S205ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB100N06S205ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:0a8a5432c27b47572986ddecea8899d9
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:8b77adac0ebc81e22c54854abccb3aea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a9bc44d2774e63bcffa3f60b880415ba
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:afb9c15c17fc8949a6d324bf8af9be28
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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