IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

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IPB180N03S4L01ATMA1
Описание:
MOSFET N-CH 30V 180A TO263-7
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB180N03S4L01ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB180N03S4L01ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:699c7cbda38c65c37939fef53951f120
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:025824a3d87d899199b3ce52804d9e63
Vgs(th) (Max) @ Id:23a6ce07a47e820f3b5959b9d226e197
Gate Charge (Qg) (Max) @ Vgs:ffaab288f96e28c6737de80fccf33846
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:52913e7be8b7381402cacd625d08eeb4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):64bb138b078a8c7996f04ae426c1050b
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:05c00a236095730b824f0b4f51480f86
Package / Case:51d69279f96728da2ba75fa31467039b
In Stock: 30438
Stock:
30438 Can Ship Immediately
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