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See Product Specifications
| номер части: | TK7E80W,S1X |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | faca79d8bea430c6302af6f2e2f59d12 |
| Current - Continuous Drain (Id) @ 25°C: | a92e0d1c6035f7c982fd464523f98b40 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 7d7f7924a390631cf0977124b81b8300 |
| Vgs(th) (Max) @ Id: | ab25bb5594fbd0457a25de154a00a0f9 |
| Gate Charge (Qg) (Max) @ Vgs: | 5a6fea380f602f17400f5e0524af2d43 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 572c05ca463a6252732b48acbaa7ccd2 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 8e657a4c990a3d844f6ec86ca07d1393 |
| Operating Temperature: | 9ba6558c95ad6e5d701d599c4dbbddd6 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
