2SK2719(F)

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See Product Specifications

Mfr. #:

2SK2719(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 900V 3A TO3P

Упаковка:

Tube

Datasheet:

2SK2719(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2719(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	7f9ea0927073dfb7afcc277af2e164af
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	27e638d8b6f391bec7013a0eb0ce7812
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153