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See Product Specifications
| номер части: | IPB65R660CFDAATMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
| Current - Continuous Drain (Id) @ 25°C: | ff2da2e5c593aab4d0b1e137db724b7a |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 8f6c17e13f5efe5fa4851cf62016cb27 |
| Vgs(th) (Max) @ Id: | 29ec95a44514c9e25c889c24e227f499 |
| Gate Charge (Qg) (Max) @ Vgs: | 0dd58e464fbd9aa4ecb11445a1cff0fc |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1373861319fea61c2b68201c68109cdd |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | e6115e6b64f7d623eb1f668cebc67c58 |
| Operating Temperature: | 2bfdfc036647708637c6c2b106628aeb |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fa3aee1f7ec3f3747a89416bed6c07d9 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
