IPBE65R099CFD7AATMA1

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See Product Specifications

Mfr. #:

Mfr.:

Infineon Technologies

Описание:

MOSFET N-CH 650V 24A TO263-7

Упаковка:

Tape & Reel (TR)

Datasheet:

IPBE65R099CFD7AATMA1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IPBE65R099CFD7AATMA1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Infineon Technologies
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	0c4305b7a2c4450b64b22399f0cdda6c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	eafe19649b7703a01dd6ca3d31f1caeb
Vgs(th) (Max) @ Id:	3079b60fa1755e211a63c56cfcf54efa
Gate Charge (Qg) (Max) @ Vgs:	7e4ecee6d6eedcfd2a920b688ec3619f
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9ddcc3e049b57e82300eafdb8bcec8fd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a195c7cb09b521bc82a0c8b4aa04489b
Operating Temperature:	2bfdfc036647708637c6c2b106628aeb
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	70cfa556a7bfa2b6e0562ccc6119329f
Package / Case:	a4f12035e6fae6f4bcd7a42fc3d1dd38