2SK2883(TE24L,Q)

Images are for reference only
See Product Specifications

Mfr. #:

2SK2883(TE24L,Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 800V 3A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK2883(TE24L,Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2883(TE24L,Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	67f5d4c9609d48653af0bc44c87639a6
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	27e638d8b6f391bec7013a0eb0ce7812
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fc68e31357073b0dee08946ec891c227
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c3c9f787be34dc1ee9e22c730142772b
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95