IPD122N10N3GATMA1

IPD122N10N3GATMA1

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IPD122N10N3GATMA1
Описание:
MOSFET N-CH 100V 59A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD122N10N3GATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD122N10N3GATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:bead6badf1c812f77be65f27437d1a94
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:688658f1a8668276ef12f38c7b2689d0
Vgs(th) (Max) @ Id:2fe77f1dbc1d2d9307e3fa879d26ce2f
Gate Charge (Qg) (Max) @ Vgs:c4c0c60e6988bb99695980ffd0c06910
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c426f391ee6caee9eaaad070f1d2e67d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):570b43b1a943317386ae8969270b009f
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:156b239f1b5a9e37e450db4c47891372
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 4940
Stock:
4940 Can Ship Immediately
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