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See Product Specifications
| номер части: | IPD200N15N3GBTMA1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | f5857b5c2d0b94d156ab7cc94df182c6 |
| Current - Continuous Drain (Id) @ 25°C: | de6fb719240c75cb73005d80d2170f88 |
| Drive Voltage (Max Rds On, Min Rds On): | 653feb5060f5a70357bbf918bdf8b794 |
| Rds On (Max) @ Id, Vgs: | 13531e27f71b73599380fd1667b1c630 |
| Vgs(th) (Max) @ Id: | 7ab71f6838d5d470ed7a1149e3b50b1e |
| Gate Charge (Qg) (Max) @ Vgs: | bb76162d41a5892918594518b268849a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9ecb8367d02f4d75b781db63f86fc6fa |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 3b4979fdef3ecbb1da8880119fdf6552 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 156b239f1b5a9e37e450db4c47891372 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
