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See Product Specifications
| номер части: | IPI052NE7N3 G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 127321faf7ab6033447f8457edc41d44 |
| Current - Continuous Drain (Id) @ 25°C: | f62bcea93691757a98ebc71a7b6990f8 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | f32b7a7248478afa621b3b8b9e567361 |
| Vgs(th) (Max) @ Id: | 329c9347f9233f19d9d6abc3c1d6b1f0 |
| Gate Charge (Qg) (Max) @ Vgs: | c2a047afd608a5b72d4963a3d3ebdf16 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | c6c71bc349cf21d6499d8543597a3aeb |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 3b4979fdef3ecbb1da8880119fdf6552 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 2c221f9460a3698745b4416503e43d93 |
| Package / Case: | 3c85f5f088979d743b17a76deb22d687 |
