IPD30N08S2L21ATMA1

IPD30N08S2L21ATMA1

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IPD30N08S2L21ATMA1
Описание:
MOSFET N-CH 75V 30A TO252-3
Упаковка:
Tape & Reel (TR)
Datasheet:
IPD30N08S2L21ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPD30N08S2L21ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):127321faf7ab6033447f8457edc41d44
Current - Continuous Drain (Id) @ 25°C:b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:cd6118d473181575e14af7aaef3a2209
Vgs(th) (Max) @ Id:fe0f3db2fbe923d58d7cf6f5fb1e0326
Gate Charge (Qg) (Max) @ Vgs:0e5e0c17b2bce4b4fdcaa9216e9ca15b
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:398f10d86198bd2d2eee0febd7a92d18
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35f3eecaa3bd22ad34ab7c60509c09d1
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:99c051db1f655d81273583e9b51421cf
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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