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See Product Specifications
| номер части: | IPSH6N03LB G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Infineon Technologies |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | de6fb719240c75cb73005d80d2170f88 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 24d61c3d63cd385fb90196efe3f47ad3 |
| Vgs(th) (Max) @ Id: | ca85c5cd8a2c1a1a8962a77a161e6080 |
| Gate Charge (Qg) (Max) @ Vgs: | 105e5a75dca0fa81aaf5f8f269b54c9d |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | bd7d57a5ba7de0e826e84e8d0fe9c54f |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 35e259c9e67ff8fd40b9e992f041f118 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 001df95c614754c08105a28cee10fd74 |
| Package / Case: | f05f3b828db9b3466aca24456db9c84e |
