IXA20I1200PB

IXA20I1200PB

Images are for reference only
See Product Specifications

IXA20I1200PB
Mfr.:
Описание:
IGBT 1200V 33A 130W TO220
Упаковка:
Tube
Datasheet:
IXA20I1200PB Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXA20I1200PB
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:35357b9c8fe4d3273d0237ecc8ff2e75
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):897aeef401681537e4148a5a805f8023
Current - Collector Pulsed (Icm):336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:6f1be9df1921eeb13590d64afc45eb7e
Power - Max:5d3e4f804afaee39a616b97cacf46541
Switching Energy:c920e27e36e2b2c69215579659369123
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:b5a630192f82b823e974670e095cc0f6
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:2ef6f46e6539142a16141349d98450b1
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46bb638de2ea693de650d7f1c3115468
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IXYX40N450HV
IXYX40N450HV
IXYS
IGBT
HGTP20N60C3R
HGTP20N60C3R
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
FGH60T65SHD-F155
FGH60T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247
FGH75T65UPD
FGH75T65UPD
onsemi
IGBT 650V 150A 375W TO-247AB
IKA08N65H5
IKA08N65H5
Infineon Technologies
IKA08N65 - DISCRETE IGBT WITH AN
NGB8206NT4G
NGB8206NT4G
Littelfuse Inc.
IGBT 390V 20A D2PAK
STGP30NC60S
STGP30NC60S
STMicroelectronics
IGBT 600V 55A 175W TO220
IRGS6B60KDTRLP
IRGS6B60KDTRLP
Infineon Technologies
IGBT 600V 13A 90W D2PAK
IRG7CH75UEF-R
IRG7CH75UEF-R
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
AUXTMGPS4070D2
AUXTMGPS4070D2
Infineon Technologies
IGBT TRENCH
GT20J341,S4X(S
GT20J341,S4X(S
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-220S
RGWS60TS65DGC13
RGWS60TS65DGC13
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
IXBOD1-36R
IXBOD1-36R
IXYS
IC DIODE MODULE BOD 0.7A 3600V
VBE100-12NO7
VBE100-12NO7
IXYS
BRIDGE RECT 1P 1.2KV ECO-PAC2
DSEC30-06B
DSEC30-06B
IXYS
DIODE ARRAY GP 600V 15A TO247AD
DNA30EM2200PZ-TUB
DNA30EM2200PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXTH34N65X2
IXTH34N65X2
IXYS
MOSFET N-CH 650V 34A TO247
IXTK102N65X2
IXTK102N65X2
IXYS
MOSFET N-CH 650V 102A TO264
IXTA60N20T
IXTA60N20T
IXYS
MOSFET N-CH 200V 60A TO263
IXFH6N100
IXFH6N100
IXYS
MOSFET N-CH 1000V 6A TO247AD
IXFC10N80P
IXFC10N80P
IXYS
MOSFET N-CH 800V 5A ISOPLUS220
IXFC96N15P
IXFC96N15P
IXYS
MOSFET N-CH 150V 42A ISOPLUS220
IXYP10N65C3D1
IXYP10N65C3D1
IXYS
IGBT 650V 30A 160W TO-220
IXXK160N65C4
IXXK160N65C4
IXYS
IGBT 650V 290A 940W TO264