IXTH2N150

IXTH2N150

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IXTH2N150
Mfr.:
Описание:
DISCMOSFET N-CH STD-HIVOLTAGE TO
Упаковка:
Tube
Datasheet:
IXTH2N150 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTH2N150
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):cd809470e1d8fd96a363c3e995e13a80
Current - Continuous Drain (Id) @ 25°C:a94e61109c54813522be818a0ece14f0
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:efe6affdb308b8ed346a8d9db5035eb7
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:bc6ff13a46b13779fa5c2c7eaad150e9
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:90ea118d3dfad3e1cbca69382abbdace
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):bfa3d0a034898aeabdf672484043fbee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:edd9a2dcab08986134ec7cc39fbfa1c3
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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