IXBT24N170

IXBT24N170

Images are for reference only
See Product Specifications

IXBT24N170
Mfr.:
Описание:
IGBT 1700V 60A 250W TO268
Упаковка:
Tube
Datasheet:
IXBT24N170 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXBT24N170
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):eefb5d410547fcbb0f7667be005adcb4
Current - Collector (Ic) (Max):4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):c5f8e18b8e035dd0b9fc94154d86df6a
Vce(on) (Max) @ Vge, Ic:eae4c21af4f4f7a27124362e8c5fca64
Power - Max:919b6817f7a1d97dc672009d630453af
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:7c815187f863edcb13486dc8ac749d40
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):bf7b1eb78d4e3b3c9f7cd53b2dbad086
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:c03e2faa3efcea6b579a80e8a51287f6
Supplier Device Package:ccbbb707191fa0eaf730154dd53fc9b9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJH30E3DPK-M2#T2
RJH30E3DPK-M2#T2
Renesas Electronics America Inc
IGBT
IKW08T120FKSA1
IKW08T120FKSA1
Infineon Technologies
IGBT 1200V 16A TO247-3
AIKB50N65DH5ATMA1
AIKB50N65DH5ATMA1
Infineon Technologies
DISCRETE SWITCHES
IXYA15N65C3D1
IXYA15N65C3D1
IXYS
DISC IGBT XPT-GENX3 TO-263D2
GT30J341,Q
GT30J341,Q
Toshiba Semiconductor and Storage
IGBT TRANS 600V 30A TO3PN
IRG4PH40UDPBF
IRG4PH40UDPBF
Infineon Technologies
IGBT 1200V 41A 160W TO247AC
IRG4IBC30UDPBF
IRG4IBC30UDPBF
Infineon Technologies
IGBT 600V 17A 45W TO220FP
IXGT15N120C
IXGT15N120C
IXYS
IGBT 1200V 30A 150W TO268
APT45GR65BSCD10
APT45GR65BSCD10
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
SIGC10T60EX7SA3
SIGC10T60EX7SA3
Infineon Technologies
IGBT 3 CHIP 600V 20A WAFER
SIGC25T60NCX7SA1
SIGC25T60NCX7SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGT8NS65DGC9
RGT8NS65DGC9
Rohm Semiconductor
IGBT
Вас также может заинтересовать
DHG100X600NA
DHG100X600NA
IXYS
DIODE MODULE 600V 100A SOT227B
W5139TJ480
W5139TJ480
IXYS
RECTIFIER DIODE
DSEP8-03A
DSEP8-03A
IXYS
DIODE GEN PURP 300V 10A TO220AC
MMO62-12IO6
MMO62-12IO6
IXYS
MODULE AC CTLR 1200V SOT-227B
MCD44-16IO8B
MCD44-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
IXTH48P20P
IXTH48P20P
IXYS
MOSFET P-CH 200V 48A TO247
IXFN360N15T2
IXFN360N15T2
IXYS
MOSFET N-CH 150V 310A SOT227B
IXFQ80N25X3
IXFQ80N25X3
IXYS
MOSFET N-CH 250V 80A TO3P
VKI75-06P1
VKI75-06P1
IXYS
IGBT MOD 600V 69A 208W ECO-PAC2
IXDH20N120D1
IXDH20N120D1
IXYS
IGBT 1200V 38A 200W TO247AD
IXYP20N120A4
IXYP20N120A4
IXYS
IGBT DISCRETE TO-220
IXDI414PI
IXDI414PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP