IXFA7N100P

IXFA7N100P

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IXFA7N100P
Mfr.:
Описание:
MOSFET N-CH 1000V 7A TO263
Упаковка:
Tube
Datasheet:
IXFA7N100P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFA7N100P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:3d28ab81c1ea57e4bc54bda355458666
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:8a6674e12ef48721bce021fb2569531a
Vgs(th) (Max) @ Id:97860642e8702fcd81c1ff171ab5050b
Gate Charge (Qg) (Max) @ Vgs:4dd049517aeb42316ab625bd041bdb73
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:9a5d80051ea410111a8f679cde9188b3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:79a80f3367b24c48ad1c57104c69e334
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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