IXFN30N110P

IXFN30N110P

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IXFN30N110P
Mfr.:
Описание:
MOSFET N-CH 1100V 25A SOT-227B
Упаковка:
Tube
Datasheet:
IXFN30N110P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFN30N110P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):a40402fe49c5d86520516122fd4f0388
Current - Continuous Drain (Id) @ 25°C:b306e492b5613991dbec23798b691a05
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a81d3d7ce266f54dc1938e859fcde610
Vgs(th) (Max) @ Id:9ef8971733f0da41d4237cb379b40c8a
Gate Charge (Qg) (Max) @ Vgs:1bcc79d1f4373af455c94b16fa393054
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:eb89ee330fbd51de311ee561e844a983
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):15e780928ab431599b0be26d5dca378d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 0
Stock:
0 Can Ship Immediately
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