IXSK30N60BD1

IXSK30N60BD1

Images are for reference only
See Product Specifications

IXSK30N60BD1
Mfr.:
Описание:
IGBT 600V 55A 200W TO264
Упаковка:
Tube
Datasheet:
IXSK30N60BD1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXSK30N60BD1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):0efb3c950cfbcf1fd8cbb4faf5d03124
Current - Collector Pulsed (Icm):df600782fcc2e59705e93a461ee16edd
Vce(on) (Max) @ Vge, Ic:6d42f4c8d7d9fc2d33becab50f086b08
Power - Max:7b2d4bf616509806611d6dafe030ae20
Switching Energy:e86d801a300867571ebc465241022434
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:64ff99e605528702fb702cb855b5c549
Td (on/off) @ 25°C:49522844e40e9494abaf0b6764747a2f
Test Condition:150c178ae8ba8890b50b3a68bdca5de9
Reverse Recovery Time (trr):b0d7994e039b4509c995ea8ecaf1bb5d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:0609d5c3ef2c861aa3d738e8f0051688
Supplier Device Package:10955927e80a6fcedbeb6f42b8f034fb
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SKP04N60
SKP04N60
Infineon Technologies
IGBT, 9.4A, 600V, N-CHANNEL
APT40GR120B2D30
APT40GR120B2D30
Microchip Technology
IGBT 1200V 88A 500W TO247
F5L200R12N3H3BPSA1
F5L200R12N3H3BPSA1
Infineon Technologies
F5L200R12 = IGBT MODULE
IXYH85N120A4
IXYH85N120A4
IXYS
IGBT GENX4 1200V 85A TO247
AIKP20N60CTAKSA1
AIKP20N60CTAKSA1
Infineon Technologies
IC DISCRETE 600V TO220-3
FZ2400R12HE4B9NPSA1
FZ2400R12HE4B9NPSA1
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
STGWA15S120DF3
STGWA15S120DF3
STMicroelectronics
IGBT 1200V 15A TO247-3L
IXGK120N60B
IXGK120N60B
IXYS
IGBT 600V 200A 660W TO264AA
IRGS4062DPBF
IRGS4062DPBF
Infineon Technologies
IGBT 600V 48A 250W D2PAK
RJH60F5DPQ-A0#T0
RJH60F5DPQ-A0#T0
Renesas Electronics America Inc
IGBT 600V 80A 260.4W TO247A
NGTB03N60R2DT4G
NGTB03N60R2DT4G
onsemi
IGBT 9A 600V DPAK
RGWX5TS65DGC11
RGWX5TS65DGC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
VUO68-12NO7
VUO68-12NO7
IXYS
BRIDGE RECT 3P 1.2KV 68A ECOPAC1
DSEI120-06A
DSEI120-06A
IXYS
DIODE GEN PURP 600V 77A TO247AD
DSEI25-06AS-TUB
DSEI25-06AS-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-26
MCC21-16IO8B
MCC21-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
VHFD37-16IO1
VHFD37-16IO1
IXYS
RECT BRIDGE 1PH 1600V V1A-PAK
IXTY01N100
IXTY01N100
IXYS
MOSFET N-CH 1000V 100MA TO252AA
IXFH50N60P3
IXFH50N60P3
IXYS
MOSFET N-CH 600V 50A TO247AD
IXFN102N30P
IXFN102N30P
IXYS
MOSFET N-CH 300V 88A SOT227B
IXTQ16N50P
IXTQ16N50P
IXYS
MOSFET N-CH 500V 16A TO3P
IXFE48N50Q
IXFE48N50Q
IXYS
MOSFET N-CH 500V 41A SOT-227B
VWI6-12P1
VWI6-12P1
IXYS
IGBT MOD 1200V 6A 40W ECO-PAC2
IXBT20N300HV
IXBT20N300HV
IXYS
IGBT 3000V 50A 250W TO268