IXTA1R6N100D2HV

IXTA1R6N100D2HV

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IXTA1R6N100D2HV
Mfr.:
Описание:
MOSFET N-CH 1000V 1.6A TO263HV
Упаковка:
Tube
Datasheet:
IXTA1R6N100D2HV Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA1R6N100D2HV
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:31410699e840577080d02205a62361a8
Drive Voltage (Max Rds On, Min Rds On):69cb45889f120bbb280b175f3d60f880
Rds On (Max) @ Id, Vgs:57d51f6455ff3c6db46079f3d509c1f7
Vgs(th) (Max) @ Id:2b7fe58fde8a6245ca2cdb48cebfd2f2
Gate Charge (Qg) (Max) @ Vgs:bce8566d45a3d29b6b5a96e927752922
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a8ec74d7b45081b4d131f219fdd80cb0
FET Feature:5a3cf4f27c5777db8b571ca4dff46f99
Power Dissipation (Max):b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:61403be9cf2d8096847d5dfa2b7dbb75
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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