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See Product Specifications
| номер части: | IXTA2N100P |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | IXYS |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | b912e8e9b12311ef3cd41c0d58a8ccc8 |
| Current - Continuous Drain (Id) @ 25°C: | a94e61109c54813522be818a0ece14f0 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 3b826dbb92f65d8f8887c44903dcbf2e |
| Vgs(th) (Max) @ Id: | 2b7fe58fde8a6245ca2cdb48cebfd2f2 |
| Gate Charge (Qg) (Max) @ Vgs: | 6ad285d978c620d8a08fef6cd00e0c9a |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 3c5fef5c42e7bc7660c33253a698e9da |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 5a26ea5f8040c9803e9e8d564f2a21b9 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 8eb0ade4b7e5562c198e107b6e89f3bd |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
