TSM80N1R2CI C0G

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Mfr. #:

TSM80N1R2CI C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 800V 5.5A ITO220AB

Упаковка:

Tube

Datasheet:

TSM80N1R2CI C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM80N1R2CI C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	475c0d5bfc10f10e4b2ea82ed2ee93ec
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	0cc0a40aaf6fbbaf4907afa56d3d8d77
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	4d0082435d61c23b9119aa73b27502d6
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	af571adeee6dc6d689823d450d6e83d2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8205ca17d37170c3e6106db260b4f4b6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6