IXTH6N100D2

IXTH6N100D2

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IXTH6N100D2
Mfr.:
Описание:
MOSFET N-CH 1000V 6A TO247
Упаковка:
Tube
Datasheet:
IXTH6N100D2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTH6N100D2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:ff2da2e5c593aab4d0b1e137db724b7a
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:407f419a5d7a65c64d787d7a174d48f2
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:18e15719914a3a51b91111a090d63c3d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c92b9759a3cb1f4f8c73e7508bc13018
FET Feature:5a3cf4f27c5777db8b571ca4dff46f99
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:edd9a2dcab08986134ec7cc39fbfa1c3
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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