IXTN320N10T

IXTN320N10T

Images are for reference only
See Product Specifications

IXTN320N10T
Mfr.:
Описание:
MOSFET N-CH 100V 320A SOT-227B
Упаковка:
Tube
Datasheet:
IXTN320N10T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTN320N10T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d635e3358759db03acbae98fff81b24e
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:bc8c17202dd4d8078d00ff849c1c8655
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):79eb312703c3ad8e7b0201bb9faa5814
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PSMN012-60YS,115
PSMN012-60YS,115
Nexperia USA Inc.
MOSFET N-CH 60V 59A LFPAK56
CSD18501Q5A
CSD18501Q5A
Texas Instruments
MOSFET N-CH 40V 22A/100A 8VSON
NTMFS4D2N10MDT1G
NTMFS4D2N10MDT1G
onsemi
N-CHANNEL SHIELDED GATE POWERTRE
HUFA76409D3
HUFA76409D3
onsemi
MOSFET N-CH 60V 18A IPAK
BSP295E6327T
BSP295E6327T
Infineon Technologies
MOSFET N-CH 60V 1.8A SOT223-4
PSMN038-100K,518
PSMN038-100K,518
Nexperia USA Inc.
MOSFET N-CH 100V 8SO
IPI25N06S3L-22
IPI25N06S3L-22
Infineon Technologies
MOSFET N-CH 55V 25A TO262-3
NTD18N06G
NTD18N06G
onsemi
MOSFET N-CH 60V 18A DPAK
AOD4136L
AOD4136L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 25V 25A TO252-3
PJD1NA60B_L2_00001
PJD1NA60B_L2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET
PHM30NQ10T,518
PHM30NQ10T,518
NXP USA Inc.
MOSFET N-CH 100V 37.6A 8HVSON
R6007ENJTL
R6007ENJTL
Rohm Semiconductor
MOSFET N-CH 600V 7A LPTS
Вас также может заинтересовать
VUO52-20NO1
VUO52-20NO1
IXYS
BRIDGE RECT 3PHASE 2KV 54A V1-A
DSP45-12A
DSP45-12A
IXYS
DIODE ARRAY GP 1200V 45A TO247AD
MDK950-14N1W
MDK950-14N1W
IXYS
DIODE MODULE 1.4KV 950A
DSSK18-0025BS-TUB
DSSK18-0025BS-TUB
IXYS
POWER DIODE DISCRETES-SCHOTTKY T
W6672TE350
W6672TE350
IXYS
DIODE GEN PURP 1.9KV 6672A -
DSA75-12B
DSA75-12B
IXYS
DIODE AVALANCHE 1.2KV 110A DO203
CMA80MT1600NHR
CMA80MT1600NHR
IXYS
POWER THYRISTOR DISC-TRIAC ISOPL
MTI85W100GC-SMD
MTI85W100GC-SMD
IXYS
IGBT MOD MOSFET SIXPACK ISOPLUS
IXFV110N10P
IXFV110N10P
IXYS
MOSFET N-CH 100V 110A PLUS220
MII100-12A3
MII100-12A3
IXYS
IGBT MODULE 1200V 135A 560W Y4M5
MITA300RF1700P-PC
MITA300RF1700P-PC
IXYS
IGBT MOD MITA300RF1700PTED-PC
IXYQ30N65B3D1
IXYQ30N65B3D1
IXYS
DISC IGBT XPT-GENX3 TO-3P (3)