IXTT1N100

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See Product Specifications

Mfr. #:

IXTT1N100

Mfr.:

IXYS

Описание:

MOSFET N-CH 1000V 1.5A TO268

Упаковка:

Tube

Datasheet:

IXTT1N100 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IXTT1N100
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	IXYS
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:	0b756db0209309a9b1ffa72563577991
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	477d8cacfebba2f822f51828b4124c59
Vgs(th) (Max) @ Id:	33fad1662a4d395e15bb3ce07329d17e
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	a92bed28e3de236a05e63920ccd4a645
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ccbbb707191fa0eaf730154dd53fc9b9
Package / Case:	c03e2faa3efcea6b579a80e8a51287f6

In Stock: 0

Stock:

0 Can Ship Immediately