IXTY08N100P

IXTY08N100P

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IXTY08N100P
Mfr.:
Описание:
MOSFET N-CH 1000V 800MA TO252
Упаковка:
Tube
Datasheet:
IXTY08N100P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTY08N100P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:3f581f743e4751ac492997d4705a42db
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:3356402c6225c8b2f5a885a1a037beb4
Vgs(th) (Max) @ Id:5ff4c16f834d3e3362d3de134ddb5b4d
Gate Charge (Qg) (Max) @ Vgs:f9fa493d398f5078ecc4fee4d3991a7d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d0093041e465cfc28a3e6d07c0755b6e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0c6019a9db9912572c44701aada80fd8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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