IXXX200N65B4

IXXX200N65B4

Images are for reference only
See Product Specifications

IXXX200N65B4
Mfr.:
Описание:
IGBT 650V 370A 1150W PLUS247
Упаковка:
Tube
Datasheet:
IXXX200N65B4 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXXX200N65B4
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:35357b9c8fe4d3273d0237ecc8ff2e75
Voltage - Collector Emitter Breakdown (Max):347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):466830d2ddbf6900399b58d9307c27d6
Current - Collector Pulsed (Icm):7b6e278c58d7d8159fe276075411b06d
Vce(on) (Max) @ Vge, Ic:a5364e963f034ce3d84033c97f3bb4b0
Power - Max:2617033e184fae50c6019301f1074c6b
Switching Energy:f527c5c4cdc0f663f3f834a533ecd11c
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:9bd30e9b09bd7a72b24ca2d141aecfd0
Td (on/off) @ 25°C:1d3926973e7df2dcb8853cbacffadf30
Test Condition:a34b9842be827d6a2d45626e9fc5fb5d
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:9e13cdc7717e27dbbfa873991fb6cc9e
Supplier Device Package:a0b4f2e7a38248dbe67016fbd796fc76
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HGTD3N60B3
HGTD3N60B3
Harris Corporation
7A, 600V, N-CHANNEL IGBT
HGT1S12N60B3DS
HGT1S12N60B3DS
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT W/
IGB10N60TATMA1
IGB10N60TATMA1
Infineon Technologies
IGBT 600V 20A 110W TO263-3
SGR20N40LTM
SGR20N40LTM
Fairchild Semiconductor
IGBT, 400V, N-CHANNEL, TO-252
AOK30B120D2
AOK30B120D2
Alpha & Omega Semiconductor Inc.
IGBT 1200V 30A TO-247
IRGP20B60PDPBF
IRGP20B60PDPBF
Infineon Technologies
IGBT 600V 40A 220W TO247AC
SKB06N60HSATMA1
SKB06N60HSATMA1
Infineon Technologies
IGBT 600V 12A 68W TO263-3
IRGS4B60KD1TRLP
IRGS4B60KD1TRLP
Infineon Technologies
IGBT 600V 11A 63W D2PAK
FGL35N120FTDTU
FGL35N120FTDTU
onsemi
IGBT TRENCH/FS 1200V 70A TO264-3
NGTD30T120F2WP
NGTD30T120F2WP
onsemi
IGBT TRENCH FIELD STOP 1200V DIE
SIGC12T60NCX1SA3
SIGC12T60NCX1SA3
Infineon Technologies
IGBT 3 CHIP 600V WAFER
LGB8207ATH
LGB8207ATH
IXYS
D2PAK, IGBT3
Вас также может заинтересовать
VUO50-16NO3
VUO50-16NO3
IXYS
BRIDGE RECT 3P 1.6KV 58A FO-F-B
DSEI2X30-10B
DSEI2X30-10B
IXYS
DIODE MODULE 1KV 30A SOT227B
DMA50P1200HR
DMA50P1200HR
IXYS
DIODE RECTIFIER 1.2KV 50A TO247
DSB40C15PB
DSB40C15PB
IXYS
DIODE ARRAY SCHOTTKY 15V TO220AB
MCC250-14IO1
MCC250-14IO1
IXYS
THYRISTOR DUAL 1400V 450A
N3790TE280
N3790TE280
IXYS
SCR 2.8KV 7410A W82
IXTP08N50D2
IXTP08N50D2
IXYS
MOSFET N-CH 500V 800MA TO220AB
IXFN80N50Q2
IXFN80N50Q2
IXYS
MOSFET N-CH 500V 72A SOT227B
IXKC13N80C
IXKC13N80C
IXYS
MOSFET N-CH 800V 13A ISOPLUS220
IXFT18N90P
IXFT18N90P
IXYS
MOSFET N-CH 900V 18A TO268
MUBW30-06A7
MUBW30-06A7
IXYS
IGBT MODULE 600V 50A 180W E2
IXBH40N160
IXBH40N160
IXYS
IGBT 1600V 33A 350W TO247AD