IXYP20N65C3D1

IXYP20N65C3D1

Images are for reference only
See Product Specifications

IXYP20N65C3D1
Mfr.:
Описание:
IGBT 650V 18A 50W TO220
Упаковка:
Tube
Datasheet:
IXYP20N65C3D1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXYP20N65C3D1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:35357b9c8fe4d3273d0237ecc8ff2e75
Voltage - Collector Emitter Breakdown (Max):347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):80048aebe005b9413929a11bba83f563
Current - Collector Pulsed (Icm):db07e82e33271a322e6868b0563694c3
Vce(on) (Max) @ Vge, Ic:6199a0c75543d8c76ef7d45180593052
Power - Max:7b2d4bf616509806611d6dafe030ae20
Switching Energy:71f5dc76467b605e25fcbfcaac68c429
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:f75f0790402660088b22522aada78703
Td (on/off) @ 25°C:f31b32684addc3e6061228a408304e61
Test Condition:758b7d01861c171bf79f2c5c95cce55d
Reverse Recovery Time (trr):e1fe9ea95c8a7f840466b8114647e660
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46bb638de2ea693de650d7f1c3115468
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HGTP3N60B3
HGTP3N60B3
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
SKW07N120
SKW07N120
Infineon Technologies
IGBT, 16.5A, 1200V, N-CHANNEL
IKP20N60H3XKSA1
IKP20N60H3XKSA1
Infineon Technologies
IGBT 600V 40A 170W TO220-3
IKZ50N65ES5XKSA1
IKZ50N65ES5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-4
IXYH20N65B3
IXYH20N65B3
IXYS
DISC IGBT XPT-GENX3 TO-247AD
IXGH30N60BD1
IXGH30N60BD1
IXYS
IGBT 600V 60A 200W TO247
IRG4BC30FD1
IRG4BC30FD1
Infineon Technologies
IGBT 600V 31A 100W TO220AB
IRG4P254SPBF
IRG4P254SPBF
Infineon Technologies
IGBT 250V 98A 200W TO247AC
APT15GP60KG
APT15GP60KG
Microsemi Corporation
IGBT 600V 56A 250W TO220
GT60N321(Q)
GT60N321(Q)
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
SIGC39T60EX7SA1
SIGC39T60EX7SA1
Infineon Technologies
IGBT 3 CHIP 600V 75A WAFER
RGCL80TS60DGC13
RGCL80TS60DGC13
Rohm Semiconductor
LOW VCE(SAT) TYPE, 600V 40A, FRD
Вас также может заинтересовать
VUO80-16NO1
VUO80-16NO1
IXYS
BRIDGE RECT 3P 1.6KV 82A V1-A
M1022LC160
M1022LC160
IXYS
FAST DIODE
MCD95-16IO1
MCD95-16IO1
IXYS
BIPOLAR MODULE-THYRISTOR/DIODE T
MCD310-08IO1
MCD310-08IO1
IXYS
MOD THYRISTOR/DIODE 800V Y2-DCB
IXTP80N075L2
IXTP80N075L2
IXYS
MOSFET N-CH 75V 80A TO220AB
IXTP05N100M
IXTP05N100M
IXYS
MOSFET N-CH 1000V 700MA TO220AB
IXFR180N06
IXFR180N06
IXYS
MOSFET N-CH 60V 180A ISOPLUS247
IXYP20N120C3
IXYP20N120C3
IXYS
IGBT 1200V 40A 278W TO-220
IXGH25N250
IXGH25N250
IXYS
IGBT 2500V 60A 250W TO247
IXGH25N100U1
IXGH25N100U1
IXYS
IGBT 1000V 50A 200W TO247AD
IXCP20M35
IXCP20M35
IXYS
IC CURRENT REGULATOR TO220AB
IXDF404SI
IXDF404SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC