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KLG-SNP2G-2UM

KLG-SNP2G-2UM

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See Product Specifications

KLG-SNP2G-2UM
Mfr.:
Описание:
GRAPHENE NANOPLATELETS 6ML
Упаковка:
Bulk
Datasheet:
KLG-SNP2G-2UM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:KLG-SNP2G-2UM
Категория:Tapes, Adhesives, Materials
Подкатегория:2D Materials
Производитель:Kennedy Labs, a division of Hub Incorporated
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:021696a0ddde58b30aee9d7e99f77e53
Number of Layers:336d5ebc5436534e61d16e63ddfca327
Length:336d5ebc5436534e61d16e63ddfca327
Width:336d5ebc5436534e61d16e63ddfca327
Thickness - Theoretical:336d5ebc5436534e61d16e63ddfca327
Size:1b33b27a9ff57ef2e67c799b57359f42
Substrate:336d5ebc5436534e61d16e63ddfca327
Suspension:336d5ebc5436534e61d16e63ddfca327
In Stock: 4
Stock:
4 Can Ship Immediately
  • Делиться:
Для использования с
SNS-C20-0808-150-D45-P
SNS-C20-0808-150-D45-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
S2D-18B3-0808-350-P
S2D-18B3-0808-350-P
Finisar Corporation
2D SILICON NANOSTAMP: RECTANGULA
KLG-SNP2G-2UM
KLG-SNP2G-2UM
Kennedy Labs, a division of Hub Incorporated
GRAPHENE NANOPLATELETS 6ML
KL-A100HF100-E1
KL-A100HF100-E1
Kennedy Labs, a division of Hub Incorporated
A100 WITH HEADER AND HALL DIE WI
KL-HF100-E1
KL-HF100-E1
Kennedy Labs, a division of Hub Incorporated
HALL EFFECT STRUCTURE ON SIO2 ON
KL-A1006P100-E1
KL-A1006P100-E1
Kennedy Labs, a division of Hub Incorporated
A100 WITH HEADER AND 6 POINT DIE
KL-IDE200D-E1
KL-IDE200D-E1
Kennedy Labs, a division of Hub Incorporated
IDE GROUP B, 12 DIE DICED, FOUR
KL-IDE101D-E1
KL-IDE101D-E1
Kennedy Labs, a division of Hub Incorporated
IDE GROUP A, 12 DIE DICED, FOUR
KL-A401DC802-E1
KL-A401DC802-E1
Kennedy Labs, a division of Hub Incorporated
OPEN CAVITY PGA WITH 80 PIN DROP
KL-A400IDEG300-E1
KL-A400IDEG300-E1
Kennedy Labs, a division of Hub Incorporated
OPEN CAVITY 16 PIN SOIC PACKAGE
S2D-18C3-0808-150-P
S2D-18C3-0808-150-P
Finisar Corporation
2D SILICON NANOSTAMP: HEXAGONAL
SNS-C14.8-2430-170-P
SNS-C14.8-2430-170-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
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