2N5619

2N5619

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See Product Specifications

2N5619
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5619 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5619
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):5334a732bb00504c525ac18c7e8c78df
Voltage - Collector Emitter Breakdown (Max):227b5c7c7a2ed2ea3da210ed0860030d
Vce Saturation (Max) @ Ib, Ic:86721e867caaac473ae807ebb42c7c6c
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:66c7019062513e91b6b5df20c3fab74c
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:acacc2b55ee43fad1b569abde9a9b21c
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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