2N5682E4

2N5682E4

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2N5682E4
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5682E4 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5682E4
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Current - Collector (Ic) (Max):e61c2e8e49eca0e4942ddb2b339c10b0
Voltage - Collector Emitter Breakdown (Max):53b3b1ea0de8e56a28871162445a88f6
Vce Saturation (Max) @ Ib, Ic:3073bd8c62f6c7b39c6864f4657792a2
Current - Collector Cutoff (Max):3d8d51d136e71ebd6b37fc92bee79578
DC Current Gain (hFE) (Min) @ Ic, Vce:b5800a9a7c9ebb97cfd9f6b60dc7ec2c
Power - Max:d6562c2ec32aee71526d8e2abf944399
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:93920dff4ce3e5abb3b2aa31e508ea21
Supplier Device Package:3f95734e414964c0961dc1548c23f63b
In Stock: 0
Stock:
0 Can Ship Immediately
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