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See Product Specifications
| номер части: | 2N7000-G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Microchip Technology |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 84bb5d06fbee5c792beaecb730124367 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 34a3446f9b31bf5ce58bed7aee129229 |
| Vgs(th) (Max) @ Id: | 2da3540dbfa7d901b7d797a5001bb2e7 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 9599881b19ba103e54af4d61275d0e39 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ebde75a9fa12085608f4e5bd5fc1a855 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
