SSM3J327R,LF

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See Product Specifications

Mfr. #:

SSM3J327R,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 20V 3.9A SOT23F

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3J327R,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3J327R,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	fcab600fa961ddac86996e261d1c6a9d
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	b869281aa51b90ce4096a0c8a61accd0
Vgs(th) (Max) @ Id:	255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:	ee46ff13df6f778bd1840d6b8fd4e382
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	2029ed1992fba79a1e150da827dbed96
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	6f7ddd1a3871496db093aff0b170878f
Package / Case:	288ec396e7075d0ccc606941dafc2b09