2N7369

2N7369

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See Product Specifications

2N7369
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N7369 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N7369
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):46f85f4ab5977146b21c80a7ef961080
Voltage - Collector Emitter Breakdown (Max):ebd7aaeec2792ddf9fe1af48370ec717
Vce Saturation (Max) @ Ib, Ic:ac02250f25642cfd93340e983f3a3f99
Current - Collector Cutoff (Max):b3c5118746c4a88ccb42bc5156918b4a
DC Current Gain (hFE) (Min) @ Ic, Vce:be0db6edb11e5d797d897034b622a0cb
Power - Max:92e7f90834277d0da34b7838c52a153e
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:1eed9039ff0b2d9fb831292f79a2a204
In Stock: 0
Stock:
0 Can Ship Immediately
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