TN0106N3-G

TN0106N3-G

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TN0106N3-G
Описание:
MOSFET N-CH 60V 350MA TO92-3
Упаковка:
Bag
Datasheet:
TN0106N3-G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TN0106N3-G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Microchip Technology
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:909be5d00be29ac673b37bd119d81ebd
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:9fa7bda3569bb420389be121cc6b93d7
Vgs(th) (Max) @ Id:b51acc836e2aea42bf844545c0460aa5
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9599881b19ba103e54af4d61275d0e39
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ebde75a9fa12085608f4e5bd5fc1a855
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:775aaf4acf8e3036c8c22ccdfd356aef
Package / Case:eb14c87bf1665793a9b98abdb5766644
In Stock: 0
Stock:
0 Can Ship Immediately
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