JAN2N6796

JAN2N6796

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JAN2N6796
Описание:
MOSFET N-CH 100V 8A TO39
Упаковка:
Bulk
Datasheet:
JAN2N6796 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:JAN2N6796
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Microsemi Corporation
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a489b528139f80d0cad4d856b5224b9f
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:9fa8180f15a8d12594aab3899cf0369d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):65db769a5fe62cde19d4277da19be965
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:ab7b2f6fad5c0b7d176e1264a6e6a29f
Package / Case:ebf6ff2a11bb3a1cece0d54146b676db
In Stock: 0
Stock:
0 Can Ship Immediately
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