JAN2N6901

JAN2N6901

Images are for reference only
See Product Specifications

JAN2N6901
Описание:
MOSFET N-CH 100V 1.69A TO205AF
Упаковка:
Bulk
Datasheet:
JAN2N6901 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:JAN2N6901
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Microsemi Corporation
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:6f75bf2f15191e56018729123371156d
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:a5458eff93637ab2a70a87e2b00af333
Vgs(th) (Max) @ Id:25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:8b9d85c83895aa060521ff8bd25c7206
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f3d2c7f09ef9fe72b43e2aef31ebc2c1
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:ab822505f7712bf3be805c0b55e30c7e
Package / Case:ebf6ff2a11bb3a1cece0d54146b676db
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
EPC2215
EPC2215
EPC
GAN TRANS 200V 8MOHM BUMPED DIE
NTE2392
NTE2392
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 40A TO3
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
PSMN2R6-60PS127
PSMN2R6-60PS127
NXP USA Inc.
N-CHANNEL POWER MOSFET
AOTF12N30
AOTF12N30
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 300V 11.5A TO220-3F
IPA65R600E6
IPA65R600E6
Infineon Technologies
IPA65R600 - 650V AND 700V COOLMO
SI4435DYPBF
SI4435DYPBF
Infineon Technologies
MOSFET P-CH 30V 8A 8SO
ZXM62N03GTA
ZXM62N03GTA
Diodes Incorporated
MOSFET N-CH 30V 3.4A/4.7A SOT223
NTD4302G
NTD4302G
onsemi
MOSFET N-CH 30V 8.4A/68A DPAK
DMP2042UCB4-7
DMP2042UCB4-7
Diodes Incorporated
MOSFET P-CH 20V 4.6A U-WLB1010-4
SPD07N60C3
SPD07N60C3
Infineon Technologies
MOSFET N-CH 600V 7.3A TO252-3
IPDQ60R065S7XTMA1
IPDQ60R065S7XTMA1
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
Вас также может заинтересовать
MAPLAD6.5KP110AE3
MAPLAD6.5KP110AE3
Microsemi Corporation
TVS DIODE 110VWM 177VC MINI-PLAD
LE71HR0921G
LE71HR0921G
Microsemi Corporation
BOARD EVAL 980 HD PHONEPORT
3EZ18D10/TR12
3EZ18D10/TR12
Microsemi Corporation
DIODE ZENER 18V 3W DO204AL
1EZ200D/TR8
1EZ200D/TR8
Microsemi Corporation
DIODE ZENER 200V 1W DO204AL
1N5334C/TR8
1N5334C/TR8
Microsemi Corporation
DIODE ZENER 3.6V 5W T18
3EZ47D5/TR8
3EZ47D5/TR8
Microsemi Corporation
DIODE ZENER 47V 3W DO204AL
MSTC25-12
MSTC25-12
Microsemi Corporation
MOD THYRISTOR DIODE 25A SF1
SD1013
SD1013
Microsemi Corporation
RF TRANS NPN 35V 150MHZ M135
MS2477
MS2477
Microsemi Corporation
RF POWER TRANSISTOR
APTGT75DA170D1G
APTGT75DA170D1G
Microsemi Corporation
IGBT MODULE 1700V 120A 520W D1
PD82000-GGGG
PD82000-GGGG
Microsemi Corporation
POE PSE CONTROLLER
LX8117A-00CDT
LX8117A-00CDT
Microsemi Corporation
IC REG LINEAR POS ADJ 1A TO252