MS1226

MS1226

Images are for reference only
See Product Specifications

MS1226
Описание:
RF TRANS NPN 36V 30MHZ M113
Упаковка:
Bulk
Datasheet:
MS1226 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MS1226
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - RF
Производитель:Microsemi Corporation
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):45c7e687f2c42d889543caf6deb5e51a
Frequency - Transition:1f133dc7287aa3dab2380f8e98bca006
Noise Figure (dB Typ @ f):336d5ebc5436534e61d16e63ddfca327
Gain:978976c6e51d40abe37c11058d931079
Power - Max:c2b6341ff219badb1edd2e5186fcacf8
DC Current Gain (hFE) (Min) @ Ic, Vce:3d5896d78c2451aa40a1acd01a461fa7
Current - Collector (Ic) (Max):2dd5b64c03990f4bcd7905d99158e485
Operating Temperature:51a4dd9c15d0a730371e943785f48353
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:235523df22e6231e77e9d91fbab52659
Supplier Device Package:235523df22e6231e77e9d91fbab52659
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ZUMTS17NTA
ZUMTS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT323
4MN10CH-TL-E
4MN10CH-TL-E
onsemi
BIP NPN 0.1A 200V
HN3C10FUTE85LF
HN3C10FUTE85LF
Toshiba Semiconductor and Storage
RF TRANS 2 NPN 12V 7GHZ US6
BFR193L3E6327XTMA1
BFR193L3E6327XTMA1
Infineon Technologies
RF TRANS NPN 12V 8GHZ TSLP-3-1
MPS5179_D27Z
MPS5179_D27Z
onsemi
RF TRANS NPN 12V 2GHZ TO92-3
MPSH17_D26Z
MPSH17_D26Z
onsemi
RF TRANS NPN 15V 800MHZ TO92-3
AT-64000-GP4
AT-64000-GP4
Broadcom Limited
RF TRANS NPN 20V BIPOLAR CHIP
2SC5084YTE85LF
2SC5084YTE85LF
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SC59
PH9008
PH9008
MACOM Technology Solutions
TRANSISTOR
80005
80005
Microsemi Corporation
RF POWER TRANSISTOR
MS1612
MS1612
Microsemi Corporation
RF POWER TRANSISTOR
MS1801
MS1801
Microsemi Corporation
RF POWER TRANSISTOR
Вас также может заинтересовать
SMCG6053AE3/TR13
SMCG6053AE3/TR13
Microsemi Corporation
TVS DIODE 33VWM 53.9VC DO215AB
SMCJ6061A/TR13
SMCJ6061A/TR13
Microsemi Corporation
TVS DIODE 70VWM 113VC DO214AB
MS108E3/TR12
MS108E3/TR12
Microsemi Corporation
DIODE SCHOTTKY 80V 1A DO204AL
1PMT5919B/TR13
1PMT5919B/TR13
Microsemi Corporation
DIODE ZENER 5.6V 3W DO216AA
1N5270B (DO-35)
1N5270B (DO-35)
Microsemi Corporation
DIODE ZENER 91V 500MW DO35
MS2210
MS2210
Microsemi Corporation
RF TRANS NPN 65V 1.215GHZ M216
2N5092
2N5092
Microsemi Corporation
NPN SILICON TRANSISTOR
APTM120DA68T1G
APTM120DA68T1G
Microsemi Corporation
MOSFET N-CH 1200V 15A SP1
APTGT150DU60TG
APTGT150DU60TG
Microsemi Corporation
IGBT MODULE 600V 225A 480W SP4
APT20GF120BRDQ1G
APT20GF120BRDQ1G
Microsemi Corporation
IGBT 1200V 36A 200W TO247
A54SX16P-TQG144
A54SX16P-TQG144
Microsemi Corporation
IC FPGA 113 I/O 144TQFP
BR230-290C2-28V-020M
BR230-290C2-28V-020M
Microsemi Corporation
RELAY GEN PURPOSE 4PDT 10A 28V