BAT42LSYL

BAT42LSYL

Images are for reference only
See Product Specifications

BAT42LSYL
Описание:
SMALL SIGNAL BIPOLAR IN DFN PACK
Упаковка:
Tape & Reel (TR)
Datasheet:
BAT42LSYL Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BAT42LSYL
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Nexperia USA Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):696e934ee0aa892c4c08deb2776f2650
Voltage - Forward (Vf) (Max) @ If:40494fc60759d307e6997e435f468928
Speed:a0189688e63fa3c4576aed928f6b00f7
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:c04c1bbb0426bcc02d8d9e031cfe6938
Capacitance @ Vr, F:df6b1f43719c4a94f11892d5c8bd1fe1
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:315aca42a9d5cb80bac580a951a57dab
Supplier Device Package:0687944207f4b7391f1a14a35ee2d17f
Operating Temperature - Junction:9ba6558c95ad6e5d701d599c4dbbddd6
In Stock: 10000
Stock:
10000 Can Ship Immediately
  • Делиться:
Для использования с
MMDL914T1G
MMDL914T1G
onsemi
DIODE GEN PURP 100V 200MA SOD323
PG5406_R2_00001
PG5406_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
VS-12EWH06FNTRL-M3
VS-12EWH06FNTRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V 12A DPAK
1N6074/TR
1N6074/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTX1N6626US/TR
JANTX1N6626US/TR
Microchip Technology
RECTIFIER UFR,FRR
VS-VSKE270-12PBF
VS-VSKE270-12PBF
Vishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 270A MAGNAPAK
120NQ035
120NQ035
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 120A D-67
DSB3A40
DSB3A40
Microchip Technology
DIODE SCHOTTKY 40V 3A DO204AH
VS-50WQ04FNTRPBF
VS-50WQ04FNTRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
RJU6054SDPE-00#J3
RJU6054SDPE-00#J3
Renesas Electronics America Inc
DIODE GEN PURP 600V 30A LDPAK
6A10G B0G
6A10G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
RB068L-40TE25
RB068L-40TE25
Rohm Semiconductor
DIODE SCHOTTKY 40V 2A PMDS
Вас также может заинтересовать
MMBZ16VALR
MMBZ16VALR
Nexperia USA Inc.
TVS DIODE TO236AB
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
BZX8450-C8V2R
BZX8450-C8V2R
Nexperia USA Inc.
BZX8450-C8V2/SOT23/TO-236AB
BZT52-C15J
BZT52-C15J
Nexperia USA Inc.
DIODE ZENER 14.7V 350MW SOD123
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
NHDTC144ETVL
NHDTC144ETVL
Nexperia USA Inc.
NHDTC144ET/SOT23/TO-236AB
PSMN013-100ES,127
PSMN013-100ES,127
Nexperia USA Inc.
MOSFET N-CH 100V 68A I2PAK
HEF4066BT-Q100
HEF4066BT-Q100
Nexperia USA Inc.
NOW NEXPERIA HEF4066BT - SPST, 4
74HC368DB,118
74HC368DB,118
Nexperia USA Inc.
IC BUFFER INVERT 6V 16SSOP
74HC175PW118
74HC175PW118
Nexperia USA Inc.
IC FF D-TYPE SNGL 4BIT 16TSSOP
74HC9114D,112
74HC9114D,112
Nexperia USA Inc.
IC INVERT SCHMITT 9CH 9-INP 20SO
74AHC00PW,118
74AHC00PW,118
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14TSSOP