PSMN013-100ES,127

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See Product Specifications

Mfr. #:

PSMN013-100ES,127

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 100V 68A I2PAK

Упаковка:

Tube

Datasheet:

PSMN013-100ES,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN013-100ES,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	784114f2cdf1aa23b46715f9def9d646
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	44bb38517cec6faed7e3a9705682a84a
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	2cc7f67f09e27ed812a8366953201d5d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	8b161f87dbcb43ae77daca5954cdd1e0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bfa3d0a034898aeabdf672484043fbee
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687