PHT6NQ10T,135

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See Product Specifications

Mfr. #:

PHT6NQ10T,135

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 100V 3A SOT223

Упаковка:

Tape & Reel (TR)

Datasheet:

PHT6NQ10T,135 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHT6NQ10T,135
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	316c25dac599f7670bfee754f360f7e4
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b4c6ff612ddf685ab610cff4bb2194e2
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	d60c24fdc651bcdf697db5847fe32e6f
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	560b42d335ed49abb01a005a967a12be
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b