PMZB290UNE2YL

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Mfr. #:

PMZB290UNE2YL

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 20V 1.2A DFN1006B-3

Упаковка:

Tape & Reel (TR)

Datasheet:

PMZB290UNE2YL Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMZB290UNE2YL
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	f0031a7f29cc351f6d033e39ac9a4f9c
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	07ef4ea89b05e6751176f932ff51b2f1
Vgs(th) (Max) @ Id:	1ea93de703116d58049e22f5a98960d1
Gate Charge (Qg) (Max) @ Vgs:	80aa3243bd1c7cc5d9e0917d51f8b629
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	1b60703abdc9719334ff5cb78bd2e22e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c723ed60de15b2e67dabbb4549b0bf2e
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	206e763e75b22ff7f967fa1ab5cf74b8
Package / Case:	fd0564f405b2eae0543f45927c1efab9