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See Product Specifications
| номер части: | NTE2329 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 192ea1990df41f495cec1f25a3ca9750 |
| Voltage - Collector Emitter Breakdown (Max): | b86aa01bc1f9484a191794819edcfc06 |
| Vce Saturation (Max) @ Ib, Ic: | e69768658034ebb2af39f2c3bfdfcf71 |
| Current - Collector Cutoff (Max): | 87dc233f4865cfe479ff8c624df14793 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 883004ba77c0cb0c0e20034e70211a79 |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 0d9181cbd72f80ee95d5ec932ad795f6 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 4ace084224f93f0bb8fb693ddb81a360 |
| Supplier Device Package: | eefd8eafc3c07468d710824b8f8c7b34 |
