NTE2932

NTE2932

Images are for reference only
See Product Specifications

NTE2932
Описание:
MOSFET N-CH 200V 21.3A TO3PML
Упаковка:
Bag
Datasheet:
NTE2932 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE2932
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:dc36e579127ef8fdcfcb6f5fa4819571
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:fbbd5e90e42350d3dcfab1af598a7be6
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:0481396efaa0ba983feec14961541fee
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:082340228a1e79450ab538340bcfd33a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b5ec22b044b4f3beee50a26e79074bf6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:83049a9d10473dae66be36377c92ea1f
Package / Case:4ace084224f93f0bb8fb693ddb81a360
In Stock: 488
Stock:
488 Can Ship Immediately
  • Делиться:
Для использования с
UPA2450BTL(3)-E1-A
UPA2450BTL(3)-E1-A
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SI4178DY-T1-GE3
SI4178DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO
IXFH32N100X
IXFH32N100X
IXYS
MOSFET N-CH 1000V 32A TO247
SI1480DH-T1-GE3
SI1480DH-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 2.6A SC70-6
IPU60R2K1CEAKMA1
IPU60R2K1CEAKMA1
Infineon Technologies
CONSUMER
STB6N65K3
STB6N65K3
STMicroelectronics
MOSFET N-CH 650V DPAK
IXTA76N25T
IXTA76N25T
IXYS
MOSFET N-CH 250V 76A TO263
IRF9Z34NLPBF
IRF9Z34NLPBF
Infineon Technologies
PLANAR 40<-<100V
IRFU9020
IRFU9020
Vishay Siliconix
MOSFET P-CH 50V 9.9A TO251AA
IXFK100N25
IXFK100N25
IXYS
MOSFET N-CH 250V 100A TO264AA
IPI147N12N3GAKSA1
IPI147N12N3GAKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO262-3
DMP2006UFG-13
DMP2006UFG-13
Diodes Incorporated
MOSFET P-CH 20V 17.5A POWERDI
Вас также может заинтересовать
47-11125-BL
47-11125-BL
NTE Electronics, Inc
H/S 1 1/2IN 25 BLUE THIN
SMC1206C2D2
SMC1206C2D2
NTE Electronics, Inc
CAP CER 2.2PF 50V C0G/NP0 1206
9003D3
9003D3
NTE Electronics, Inc
CAP CER 3.3PF 1KV SL RADIAL/DISC
MLR222K100
MLR222K100
NTE Electronics, Inc
CAP FILM 2200PF 10% 100VDC RAD
R59-10A
R59-10A
NTE Electronics, Inc
CIR BRKR THRM 10A 250VAC 32VDC
76-IPD12L
76-IPD12L
NTE Electronics, Inc
PVC INS PIGGYBACK DISCONN 50 BAG
76-IRT16-3/8
76-IRT16-3/8
NTE Electronics, Inc
PVC INS RING TERM 16-14WG
76-HIBC22
76-HIBC22
NTE Electronics, Inc
HEAT SHRINK INS BUTT CONN
NTE390
NTE390
NTE Electronics, Inc
TRANS NPN 100V 10A TO3PN
500E-0192
500E-0192
NTE Electronics, Inc
TRIMMER 10 OHM MULTI
SR1-0603-118
SR1-0603-118
NTE Electronics, Inc
RES 180 OHM 5% 1/16W 0603
5W068
5W068
NTE Electronics, Inc
RES 68 OHM 5% 5W AXIAL