NTE2973

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See Product Specifications

Mfr. #:

NTE2973

Mfr.:

NTE Electronics, Inc

Описание:

MOSFET-N-CHAN ENHANCEMENT TO-3P

Упаковка:

Bag

Datasheet:

NTE2973 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	NTE2973
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NTE Electronics, Inc
Упаковка:	Bag
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	c41948a95780bdf58d7eb2a34dbc26cd
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	236c5feeaf15038811be6a89a712eda1
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	d10d2c6ff67938a1d3687e8f08d0c91c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8b3a6582dedc2290f747e12fcc7942ac
Operating Temperature:	c175279a77a6d2f4f996c08dd5d3786c
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	dc62bb2234bdbf5b418010bea6cac21b
Package / Case:	a37ad9863329afbf5b7bab5645143153

In Stock: 252

Stock:

252 Can Ship Immediately