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See Product Specifications
| номер части: | 2PA1015GR,126 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Box (TB) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | ca24c5871f38edf7913c4d817ad140a2 |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Vce Saturation (Max) @ Ib, Ic: | e28ae33282b681c385c626b308495e8e |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5e0023d662987c41faa668dfb4973fbe |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Frequency - Transition: | 20e3a666c0f38875bdf9ce0635b95246 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
