BUK761R7-40E/GFJ

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See Product Specifications

Mfr. #:

BUK761R7-40E/GFJ

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

BUK761R7-40E/GFJ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK761R7-40E/GFJ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	336d5ebc5436534e61d16e63ddfca327
Technology:	336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):	336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956