BUK961R5-30E,118

Images are for reference only
See Product Specifications

Mfr. #:

BUK961R5-30E,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 120A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

BUK961R5-30E,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK961R5-30E,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	6c542b55ce019316345f5f2f7ae44ace
Vgs(th) (Max) @ Id:	335f69c535d38282d0c930df5ac1d478
Gate Charge (Qg) (Max) @ Vgs:	4b5d4eec80e30ce9d920ee32b2779e26
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	a1cb949b8fc420f24877e054e1b6db9e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9391ddb6be895845489b89eace2db171
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956